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2SC6017 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part No. 2SC6017
Description  PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6017 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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2SA2169 / 2SC6017
No.8275-1/5
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications ( ) : 2SA2169
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)100
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)10
A
Collector Current (Pulse)
ICP
PW
≤100µs
(--)13
A
Base Current
IB
(--)2
A
Collector Dissipation
PC
0.95
W
Tc=25
°C20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)10
µA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)10
µA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)1A
200
(560)700
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
(130)200
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(90)60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)250mA
(--290)180
(--580)360
mV
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)5A, IB=(--)250mA
(--)0.93
(--)1.4
V
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8275
32505EA TS IM TB-00001269
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications


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