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2SC6017 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. 2SC6017
Description  PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6017 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SA2169 / 2SC6017
No.8275-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)100µA, IE=0
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)100µA, IC=0
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(70)40
ns
Storage Time
tstg
See specified Test Circuit.
(650)1000
ns
Fall Time
tf
See specified Test Circuit.
(60)80
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
2045B
2044B
Switching Time Test Circuit
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
0.5
1.2
2.3
0.5
1
23
4
2.3
2.3
VR
RB
VCC=20V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=3A
For PNP, the polarity is reversed.
6mA
--5.0
--3.0
--4.5
--4.0
--3.5
--2.0
--2.5
--1.0
--1.5
--0.5
5.0
3.0
4.5
4.0
3.5
2.0
2.5
1.0
1.5
0.5
0
--0.5
0
--1.0
--1.5
--2.0
IC -- VCE
--2mA
--6mA
--8mA
--10mA
IB=0
IT08961
0.5
0
1.0
1.5
2.0
0
IC -- VCE
IB=0
2mA
4mA
8mA
10mA
20mA
12mA
14mA
16mA
IT08962
2SA2169
2SC6017
--18mA
--16mA
18mA
--12mA
--4mA
--14mA
--20mA
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
12
4
3


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