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2SD0601 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD0601 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A s Features q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 50 7 200 100 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage Collector output capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE1 * hFE2 VCE(sat) fT NV Cob Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 10V, IE = 0, f = 1MHz min 60 50 7 160 90 typ 0.1 150 110 3.5 max 0.1 100 460 0.3 Unit µA µA V V V V MHz mV pF Marking symbol : Z *h FE1 Rank classification Rank Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol ZQ ZR ZS |
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