1

Transistor

2SD601A

Silicon NPN epitaxial planer type

For general amplification

Complementary to 2SB709A

q

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

Ratings

60

50

7

200

100

200

150

–55 ~ +150

Unit

V

V

V

mA

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Noise voltage

Collector output capacitance

Symbol

*

NV

Conditions

min

60

50

7

160

90

typ

0.1

150

110

3.5

max

0.1

100

460

0.3

Unit

µA

µA

V

V

V

V

MHz

mV

pF

Marking symbol :

Z

Rank

Q

R

S

160 ~ 260

210 ~ 340

290 ~ 460

Marking Symbol

ZQ

ZR

ZS