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HTT1115S Datasheet(PDF) 6 Page - Hitachi Semiconductor

Part # HTT1115S
Description  SILICON NPN EPITAXIAL TWIN TRANSISTOR
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HTT1115S Datasheet(HTML) 6 Page - Hitachi Semiconductor

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HTT1115S
Rev.3, Aug. 2001, page 6 of 10
Main Characteristics (Q2)
100
10
100
200
0
120
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
25
50
V
= 1 V
CE
0
0.4
0.6
1.0
0
0.5
1.0
1.5
3.5
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
0.2
0.8
V
= 1 V
CE
2.5
2.0
3.0
50
40
30
20
10
Typical Forward Transfer Characteristics
50
40
20
10
30
IB = 50 µA
100 µA
150 µ
A
200 µ
A
250
µA
300
µA
350
µA
400
µA
450
µA
500
µA
1.2
2.0
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.8
1.0
1.2
1.4
1.6
0
0.4
0.8
1.6
0.6
I
= 0
f = 1MHz
E


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