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2SK3047 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SK3047 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page  1 Power F-MOS FETs unit: mm 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q V GSS = ±30V guaranteed q High-speed switching: t f = 25ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Electrical Characteristics (T C = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr td(off) tf Conditions VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1A VDS = 25V, ID = 1A IDR = 2A, VGS = 0 VDS = 20V, VGS = 0, f = 1MHz VGS = 10V, ID = 1A VDD = 200V, RL = 200Ω min 800 2 0.7 typ 4.8 1.1 350 60 25 15 20 60 25 max 0.1 ±1 5 7 −1.3 Unit mA µA V V Ω S V pF pF pF ns ns ns ns s Absolute Maximum Ratings (T C = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±2 ±4 15 30 2 150 −55 to +150 Unit V V A A mJ W °C °C * L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse 1 9.9±0.3 4.6±0.2 2.9±0.2 0.8±0.1 1.4±0.2 23 φ3.2±0.1 2.6±0.1 0.55±0.15 2.54±0.3 5.08±0.5 1.6±0.2 1: Gate 2: Drain 3: Source TO-220D Package |
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