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2SK3048 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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2SK3048 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 3 page 2 Power F-MOS FETs 2SK3048 Area of safe operation (ASO) PD Ta IAS L-load ID VDS ID VGS VDS VGS RDS(on) ID | Yfs | ID Ciss, Coss, Crss VDS 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 Non repetitive pulse T C=25˚C t=10 µs 100 µs DC 1ms 10ms 100ms Drain to source voltage V DS (V) 0 160 40 120 80 140 20 100 60 0 60 50 40 30 20 10 (1) T C=Ta (2) Without heat sink (1) (2) Ambient temperature Ta (˚C) 1 0.1 10 3 0.3 0.1 1 0.3 3 10 T C=25˚C 22.5mJ L-load (mH) 0 5 10 15 20 25 0 1 2 3 4 5 6 T C=25˚C 5.5V 4V 5V 4.5V 40W Drain to source voltage V DS (V) 012 10 8 26 4 0 1 2 3 4 5 6 V DS=25V 25˚C 0˚C T C=125˚C 85˚C Gate to source voltage V GS (V) 0 5 10 15 20 25 30 0 10 20 30 5 35 25 15 I D=3A 2A 1A T C=25˚C Gate to source voltage V GS (V) 012345 6 0 1 2 3 4 5 6 V GS=10V T C=125˚C 85˚C 25˚C 0˚C Drain current I D (A) 05 4 3 2 16 0 1 2 3 4 5 6 7 V DS=25V T C=0˚C 25˚C 85˚C 125˚C Drain current I D (A) 0 100 20 40 60 80 1000 100 10 300 30 C iss C oss C rss f=1MHz T C=25˚C Drain to source voltage V DS (V) |
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