S5A2250A01-D0B0 datasheet(4/12 Pages) SAMSUNG

Part #	S5A2250A01-D0B0

Description	DUAL ELECTRONIC VOLUME CONTROL

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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4 / 12 page

S5A2250A01

DUAL ELECTRONIC VOLUME CONTROL

4

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°C)

ELECTRICAL CHARACTERISTICS

(VDD = 12V, f = 1kHz, Ta = 25°C, unless otherwise specified)

Characteristic

Symbol

Value

Unit

Supply Voltage

VDD

13

V

Power Dissipation

PD

150

mW

Operating Temperature

TOPR

− 20 − + 75

°C

Storage Temperature

TSTG

− 55 − + 125

°C

Input Voltage

VI

VDD + 0.3 − VSS - 0.3

V

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Circuit Current

IDD1

IDD2

VDD = 13V

VDD = 6V

0.1

1.0

0.8

2.5

2.0

mA

Attenuator Resistor

RATT1

pin 3 - pin 4

pin 14 - pin 13

25

50

70

k

Ω

RATT2

pin 5 - pin 4

pin 12 - pin 13

10

20

30

Backup Current

lBACKUP

VDD = 4V, s/w1 = b

−

10

µA

Input High Voltage

Input Low Voltage

VIH

VIL

−up (down) s/w on

s/w1 = a

9.6

11.8

0.5

12.3

1.2

V

Total Harmonic

Distortion

THD

VI = 1.0 Vpp,

ATT = 10dB, f = 15kHz

−

0.005

0.01

%

Attenuator Error

VATT(ERR)

VO = 5 step

−2

0

2

dB

Max Input Amplitude

VI(MAX)

THD = 1%, VOL = max

1.0

2.5

4.0

Vrms

DCO Output current

IO(DCO)

1 step

70

100

140

µA

Cross Talk

CT

ATT =

− 10dB

55

65

−

dB

Operating Frequency

fOSC1

fOSC2

UP/SW ON, S/W 3 = a

S/W 3 = d

5

9

13

11

20

13

Hz

kHz

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S5A2250A01-D0B0 Datasheet(PDF) 4 Page - Samsung semiconductor

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