2N1890 datasheet(2/3 Pages) MICROSEMI

Part #	2N1890

Description	NPN LOW POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

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2N1711, 2N1890 JAN SERIES

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

IC = 10 µAdc, VCE = 10 Vdc

IC = 150 mAdc, VCE = 10 Vdc

IC = 500 mAdc, VCE = 10 Vdc

2N1711, S

hFE

20

100

50

300

Collector-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

2N1711, S

2N1890, S

IC = 50 mAdc, IB = 5.0 mAdc

2N1890, S

VCE(sat)

1.5

5.0

1.2

Vdc

Base-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

IC = 50 mAdc, IB = 5.0 mVdc

2N1890, S

VBE(sat)

1.3

0.9

Vdc

DYNAMIC CHARACTERISTICS

Small-Signal Short-Circuit Forward-Current Transfer Ratio

IC = 1.0 mAdc, VCE = 5.0 Vdc

IC = 5.0 mAdc, VCE = 10 Vdc

hfe

80

90

200

270

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward-Current Transfer Ratio

IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz

h

fe



3.5

12

Small-Signal Short-Circuit Input Impedance

IC = 5.0 mAdc, VCB = 10 Vdc

hib

4.0

8.0

Ω

Small-Signal Short-Circuit Output Admittance

IC = 5.0 mAdc, VCB = 10 Vdc

2N1711, S

2N1890, S

hob

1.0

.03

µΩ

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

2N1711, S

2N1890, S

Cobo

8.0

5.0

25

15

pF

SWITCHING CHARACTERISTICS

Turn-On Time + Turn-Off Time

(See figure 1 of MIL-PRF-19500/225)

ton + toff

30

ηs

(3) Pulse Test: Pulse Width 250 to 350

µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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