Si4837DY

Vishay Siliconix

New Product

www.vishay.com

4

Document Number: 71662

S-04246—Rev. A, 16-Jul-01

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

1.25

1.50

0.000

0.014

0.028

0.042

0.056

0.070

0

2468

10

–0.4

–0.2

0.0

0.2

0.4

0.6

0.8

–50

–25

0

25

50

75

100

125

150

1

10

50

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

0.00

0.25

0.50

0.75

1.00

Single Pulse Power, Junction-to-Ambient

Time (sec)

200

160

120

80

40

0

0.001

0.1

1

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

1

10

600

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

100

1. Duty Cycle, D =

Notes:

4. Surface Mounted

0.01