SI6874EDQ datasheet(1/5 Pages) VISHAY

Part #	SI6874EDQ

Description	Dual N-Channel 20-V (D-S) MOSFET, Common Drain

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Si6874EDQ

Vishay Siliconix

New Product

Document Number: 71252

S-01753—Rev. A, 14-Aug-00

www.vishay.com

S FaxBack 408-970-5600

1

Dual N-Channel 20-V (D-S) MOSFET, Common Drain

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

20

0.026 @ VGS = 4.5 V

6.5

20

0.031 @ VGS = 2.5 V

5.8

0.039 @ VGS = 1.8 V

5.0

Si6874EDQ

S1

G1

S2

G2

1

2

3

4

8

7

6

5

D

TSSOP-8

Top View

D

G1

S1

D

G2

S2

N-Channel

2.4 k

W

2.4 k

W

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

6.5

5.3

A

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

4.7

4.2

A

Pulsed Drain Current

IDM

30

A

Continuous Source Current (Diode Conduction)a

IS

1.50

1.10

Maximum Power Dissipationa

TA = 25_C

PD

1.67

1.20

W

Maximum Power Dissipationa

TA = 85_C

PD

1.06

0.76

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

v 10 sec

RthJA

60

75

_C/W

Maximum Junction-to-Ambienta

Steady State

RthJA

86

105

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

38

45

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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