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SI6874EDQ Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI6874EDQ Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si6874EDQ Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71252 S-01753—Rev. A, 14-Aug-00 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) –0.6 –0.4 –0.2 –0.0 0.2 0.4 –50 –25 0 25 50 75 100 125 150 ID = 250 mA 1.0 1.2 0 0.02 0.04 0.06 0.08 0123456 1 10 20 ID = 6.5 A 0 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Threshold Voltage TJ – Temperature (_C) SourceDrain Diode Forward Voltage OnResistance vs. GatetoSource Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0 8 32 Single Pulse Power, Junction-to-Ambient Time (sec) 16 24 10–3 10–2 1 10 600 10–1 10–4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 86_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1 100 10 10–1 10–2 |
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