K6F2016R4G-FF70 datasheet(3/10 Pages) SAMSUNG

Part #	K6F2016R4G-FF70

Description	2Mb(128K x 16 bit) Low Power SRAM

Download	10 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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3 / 10 page

Revision 0.0

CMOS SRAM

April 2005

K6F2016R4G Family

- 3 -

Preliminary

128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

PIN DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

48-FBGA: Top View (Ball Down)

LB

OE

A0

A1

A2

DNU

I/O9

UB

A3

A4

CS

I/O1

I/O10

I/O11

A5

A6

I/O2

I/O3

Vss

I/O12

DNU

A7

I/O4

Vcc

I/O13

DNU

A16

I/O5

Vss

I/O15

I/O14

A14

A15

I/O6

I/O7

I/O16

DNU

A12

A13

WE

I/O8

DNU

A8

A9

A10

A11

DNU

1

234

56

A

B

C

D

E

F

G

H

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice

.

Name

Function

Name

Function

CS

Chip Select Input

Vcc

Power

OE

Output Enable Input

Vss

Ground

WE

Write Enable Input

UB

Upper Byte(I/O9~16)

A0~A16

Address Inputs

LB

Lower Byte(I/O1~8)

I/O1~I/O16 Data Inputs/Outputs

DNU

Do Not Use

Precharge circuit.

Memory

Cell

Array

I/O Circuit

Column select

Clk gen.

Row

select

WE

OE

UB

CS

I/O1~I/O8

Data

cont

Data

cont

Data

cont

LB

I/O9~I/O16

Vcc

Vss

Row

Addresses

Control Logic

Column Addresses

PRODUCT FAMILY

1. The parameter is measured with 30pF test load.

2. Typical values are measured at VCC=1.8V, TA=25

°C and not 100% tested.

Product Family

Operating Temperature

Vcc Range

Speed

Power Dissipation

PKG Type

Standby

(ISB1, Typ.)

Operating

(ICC1, Max)

K6F2016R4G-F

Industrial(-40~85

°C)

1.65~1.95V

701)/85ns

0.5

µA2)

2mA

48-FBGA-6.00x7.00

GENERAL DESCRIPTION

The K6F2016R4G families are fabricated by SAMSUNG

′s

advanced full CMOS process technology. The families support

industrial temperature range and 48 ball Chip Scale Package

for user flexibility of system design. The family also supports

low data retention voltage for battery back-up operation with

low data retention current.

FEATURES

• Process Technology: Full CMOS

• Organization: 128K x16 bit

• Power Supply Voltage: 1.65~1.95V

• Low Data Retention Voltage: 1.0V(Min)

• Three State Outputs

• Package Type: 48-FBGA-6.00x7.00

Similar Part No. - K6F2016R4G-FF70

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K6F2016U4D	117Kb / 9P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F2016U4D-F	117Kb / 9P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F2016U4D-FF55	117Kb / 9P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F2016U4D-FF70	117Kb / 9P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F2016U4E	158Kb / 9P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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K6F2016R4G-FF70 Datasheet(PDF) 3 Page - Samsung semiconductor

K6F2016R4G-FF70 Datasheet(HTML) 3 Page - Samsung semiconductor

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