TMS416400A, TMS417400A

4194304 BY 4-BIT

DYNAMIC RANDOM-ACCESS MEMORIES

SMKS889B – AUGUST 1996 – REVISED OCTOBER 1997

10

POST OFFICE BOX 1443

electrical characteristics over recommended ranges of supply voltage and ambient temperature

(unless otherwise noted) (continued)

TMS417400A

PARAMETER

TEST CONDITIONS†

’417400A - 50

’417400A - 60

’417400A - 70

UNIT

PARAMETER

TEST CONDITIONS†

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

VOH

High-level output

voltage

IOH = – 5 mA

2.4

2.4

2.4

V

VOL

Low-level output

voltage

IOL = 4.2 mA

0.4

0.4

0.4

V

II

Input current

(leakage)

VCC = 5.5 V,

VI = 0 V to 6.5 V,

All others = 0 V to VCC

± 10

± 10

± 10

µA

IO

Output current

(leakage)

VCC = 5.5 V,

VO = 0 V to VCC,

CAS high

± 10

± 10

± 10

µA

ICC1‡§

Average read- or

write-cycle current

VCC = 5.5 V,

Minimum cycle

130

110

100

mA

ICC2

Average standby

VIH = 2.4 V ( TTL),

After one memory cycle,

RAS and CAS high

2

2

2

mA

ICC2

gy

current

VIH = VCC – 0.2 V (CMOS),

After one memory cycle,

RAS and CAS high

1

1

1

mA

ICC3‡§

Average refresh

current (RAS-only

refresh or CBR)

VCC = 5.5 V,

Minimum cycle,

RAS cycling,

CAS high (RAS only),

RAS low after CAS low (CBR)

130

110

100

mA

ICC4‡¶

Average page

current

VCC = 5.5 V,

tPC = MIN,

RAS low,

CAS cycling

90

70

60

mA

† For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.

‡ Measured with outputs open

§ Measured with a maximum of one address change while RAS = VIL

¶ Measured with a maximum of one address change during each page-mode cycle, tPC.