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IRFZ34NL Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFZ34NL
Description  HEXFET® Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFZ34NL Datasheet(HTML) 1 Page - International Rectifier

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IRFZ34NS/L
HEXFET® Power MOSFET
PD - 9.1311A
l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.040Ω
ID = 29A
2
D
P a k
T O - 262
S
D
G
8/25/97
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
2.2
RθJA
Junction-to-Ambient (PCB mount) **
––––
40
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V…
29
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
…
20
A
IDM
Pulsed Drain Current
…
100
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
130
mJ
IAR
Avalanche Current

16
A
EAR
Repetitive Avalanche Energy

5.6
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C


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