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AS4C256K16FO-50JI Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation |
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AS4C256K16FO-50JI Datasheet(HTML) 5 Page - Alliance Semiconductor Corporation |
5 / 25 page ® AS4C256K16FO 4/11/01; V.0.9.1 Alliance Semiconductor P. 5 of 25 Write cycle (VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C) Read-modify-write cycle (VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C) Fast page mode cycle (VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C) Standard Symbol Parameter –25 –30 –35 –50 Unit Notes Min Max Min Max Min Max Min Max tASC Column address setup time 0 – 0– 0– 0– ns tCAH Column address hold time 5 – 5– 5– 9– ns tAWR Column address hold time to RAS 19 – 26 – 28 – 30 – ns tWCS Write command setup time 0 – 0– 0– 0– ns 11 tWCH Write command hold time 5 – 5– 5– 9– ns 11 tWCR Write command hold time to RAS 19 – 26 – 28 – 30 – ns tWP Write command pulse width 5 – 5 – 5 – 9 – ns tRWL Write command to RAS lead time 7 – 10 – 11 – 12 – ns tCWL Write command to CAS lead time 5 – 10 – 11 – 12 – ns tDS Data-in setup time 0 – 0– 0– 0– ns 12 tDH Data-in hold time 5 – 5– 5– 9– ns 12 tDHR Data-in hold time to RAS 19 – 26 – 28 – 30 – ns Standard Symbol Parameter –25 –30 –35 –50 Unit Notes Min Max Min Max Min Max Min Max tRWC Read-write cycle time 100 – 100 – 105 – 120 – ns tRWD RAS to WE delay time 34 – 50 – 54 – 60 – ns 11 tCWD CAS to WE delay time 17 – 26 – 28 – 30 – ns 11 tAWD Column address to WE delay time 21 – 32 – 35 – 40 – ns 11 tRSH(W) CAS to RAS hold time (write) 7 – 10 – 10 – 12 – ns tCAS(W) CAS pulse width (write) 15 – 15 – 15 – 15 – ns Standard Symbol Parameter –25 –30 –35 –50 Unit Notes Min Max Min Max Min Max Min Max tPC Read or write cycle time 8 – 12 – 14 – 25 – ns 14 tCAP Access time from CAS precharge – 14 – 19 – 21 – 23 ns 13 tCP CAS precharge time 3–3 – 4–5– ns tPCM Fast page mode RMW cycle 56 – 56 – 58 – 60 – ns tCRW Page mode CAS pulse width (RMW) 44 – 44 – 46 – 50 – ns tRASP RAS pulse width 25 75K 30 75K 35 75K 50 75K ns |
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