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AS4C256K16F0-50JC Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation |
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AS4C256K16F0-50JC Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation |
1 / 25 page Copyright © Alliance Semiconductor. All rights reserved. AS4C256K16FO 4/11/01; V.0.9.1 Alliance Semiconductor P. 1 of 25 5V 256K X 16 CMOS DRAM (Fast Page Mode) ® Pin designation Pin(s) Description A0 to A8 Address inputs RAS Row address strobe I/O0 to I/O15 Input/output OE Output enable UCAS Column address strobe, upper byte LCAS Column address strobe, lower byte WE Read/write control VCC Power (+5V ± 10%) GND Ground Features • Organization: 262,144 words × 16 bits • High speed - 25/30/35/50 ns RAS access time - 12/16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 770 mW max (ASAS4C256K16FO-50) - Standby: 5.5 mW max, CMOS I/O •Fast page mode • AS4C256K16FO-50 timings are also valid for AS4C256K16FO-60. •Refresh - 512 refresh cycles, 8 ms refresh interval -RAS-only or CAS-before-RAS refresh or self-refresh - Self-refresh option is available for new generation device only. Contact Alliance for more information. • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard packages - 400 mil, 40-pin SOJ - 400 mil, 40/44-pin TSOP II • Single 5V power supply/built-in Vbb generator • Latch-up current > 200 mA Pin arrangement 40 39 38 37 36 35 34 33 32 31 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 SOJ 30 29 28 27 26 25 24 23 22 21 NC LCAS UCAS OE A8 A7 A6 A5 A4 GND 1 2 3 4 5 6 7 8 9 10 VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 11 12 13 14 15 16 17 18 19 20 NC NC WE RAS NC A0 A1 A2 A3 VCC VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC A0 A1 A2 A3 VCC VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A8 A7 A6 A5 A4 VSS 44 43 42 41 40 39 38 37 36 35 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 19 20 21 22 TSOP II Selection guide Symbol –25 –30 –35 –50 Unit Maximum RAS access time tRAC 25 30 35 50 ns Maximum column address access time tCAA 12 16 18 25 ns Maximum CAS access time tCAC 710 10 10 ns Maximum output enable (OE) access time tOEA 710 10 10 ns Minimum read or write cycle time tRC 40 65 70 85 ns Minimum EDO page mode cycle time tPC 12 12 14 25 ns Maximum operating current ICC1 200 180 160 140 mA Maximum CMOS standby current ICC2 2.0 2.0 2.0 2.0 mA |
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