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AS4C256K16F0-50JC Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation

Part # AS4C256K16F0-50JC
Description  5V 256K X 16 CMOS DRAM (Fast Page Mode)
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C256K16F0-50JC Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation

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AS4C256K16FO
4/11/01; V.0.9.1
Alliance Semiconductor
P. 1 of 25
5V 256K X 16 CMOS DRAM (Fast Page Mode)
®
Pin designation
Pin(s)
Description
A0 to A8
Address inputs
RAS
Row address strobe
I/O0 to I/O15
Input/output
OE
Output enable
UCAS
Column address strobe, upper byte
LCAS
Column address strobe, lower byte
WE
Read/write control
VCC
Power (+5V
± 10%)
GND
Ground
Features
• Organization: 262,144 words × 16 bits
• High speed
- 25/30/35/50 ns RAS access time
- 12/16/18/25 ns column address access time
- 7/10/10/10 ns CAS access time
• Low power consumption
- Active: 770 mW max (ASAS4C256K16FO-50)
- Standby: 5.5 mW max, CMOS I/O
•Fast page mode
• AS4C256K16FO-50 timings are also valid for
AS4C256K16FO-60.
•Refresh
- 512 refresh cycles, 8 ms refresh interval
-RAS-only or CAS-before-RAS refresh or self-refresh
- Self-refresh option is available for new generation
device only. Contact Alliance for more information.
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
• Single 5V power supply/built-in Vbb generator
• Latch-up current > 200 mA
Pin arrangement
40
39
38
37
36
35
34
33
32
31
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
SOJ
30
29
28
27
26
25
24
23
22
21
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
1
2
3
4
5
6
7
8
9
10
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
11
12
13
14
15
16
17
18
19
20
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
VSS
I/O15
I/O14
I/O13
I/O12
VSS
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
VSS
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
TSOP II
Selection guide
Symbol
–25
–30
–35
–50
Unit
Maximum RAS access time
tRAC
25
30
35
50
ns
Maximum column address
access time
tCAA
12
16
18
25
ns
Maximum CAS access time
tCAC
710
10
10
ns
Maximum output enable (OE)
access time
tOEA
710
10
10
ns
Minimum read or write cycle
time
tRC
40
65
70
85
ns
Minimum EDO page mode
cycle time
tPC
12
12
14
25
ns
Maximum operating current
ICC1
200
180
160
140
mA
Maximum CMOS standby
current
ICC2
2.0
2.0
2.0
2.0
mA


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