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APM2700CCCTUL Datasheet(PDF) 2 Page - Anpec Electronics Coropration |
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APM2700CCCTUL Datasheet(HTML) 2 Page - Anpec Electronics Coropration |
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2 / 14 page  Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 www.anpec.com.tw 2 APM2700C Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Electrical Characteristics (T A = 25°C unless otherwise noted) Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Symbol Parameter N Channel P Channel Unit VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±8 ±8 V ID* Continuous Drain Current 1.8 -1.2 IDM* 300 µs Pulsed Drain Current VGS=±4.5V 6 -5 A IS* Diode Continuous Forward Current 1 -1 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 °C TA=25°C 0.83 PD* Power Dissipation TA=100°C 0.3 W RθJA* Thermal Resistance-Junction to Ambient 150 °C/W APM2700C Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics VGS=0V, IDS=250 µA N-Ch 20 BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250 µA P-Ch -20 V VDS=16V, VGS=0V 1 TJ=85°C N-Ch 30 VDS=-16V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C P-Ch -30 µA VDS=VGS, IDS=250 µA N-Ch 0.45 0.6 1.2 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250 µA P-Ch -0.45 -0.6 -1.2 V VGS=±8V, VDS=0V N-Ch ±2 µA IGSS Gate Leakage Current VGS=±8V, VDS=0V P-Ch ±100 nA VGS=4.5V, IDS=1.8A N-Ch 170 220 VGS=-4.5V, IDS=-1.2A P-Ch 360 470 VGS=2.5V, IDS=0.9A N-Ch 270 350 RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-0.7A P-Ch 530 690 m Ω |
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