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CM100TU-24H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM100TU-24H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM100TU-24H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 100 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 200* Amperes Emitter Current** IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 650 Watts Mounting Torque, M5 Main Terminal – 2.5~3.5 N · m Mounting Torque, M5 Mounting – 2.5~3.5 N · m Weight – 680 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 100A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V – 375 – nC Emitter-Collector Voltage* VEC IE = 100A, VGE = 0V – – 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies –– 15 nF Output Capacitance Coes VCE = 10V, VGE = 0V – – 5 nF Reverse Transfer Capacitance Cres –– 3 nF Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 100A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time td(off) RG = 3.1Ω, Resistive – – 300 ns Times Fall Time tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 100A, diE/dt = -200A/µs – – 300 µC Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = -200A/µs – 0.55 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module – – 0.19 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per Free-Wheel Diode 1/6 Module – – 0.35 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.015 – °C/W MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE |
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