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AP2304N Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP2304N Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
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3 / 4 page  AP2304N Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 2 4 6 8 10 024 6 8 10 V DS , Drain-to-Source Voltage (V) T A =25 o C V GS =3V V GS =10V - 5V V GS =4V 0 2 4 6 8 10 024 68 10 V DS , Drain-to-Source Voltage (V) T A =150 o C V GS =4V V GS =10V - 5V V GS =3V 0 100 200 300 400 500 600 700 024 6 8 10 V GS , Gate-to-Source Voltage (V) I D =2A T A =25 ℃ ℃ ℃ ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS =10V I D =2.5A 0 1 10 0.1 0.5 0.9 1.3 V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C 1.45 1.65 1.85 2.05 2.25 -50 0 50 100 150 T j , Junction Temperature ( o C) |
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Similar Description - AP2304N |
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