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AP3310H Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP3310H Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
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2 / 6 page  AP3310H/J Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 -V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A - - 150 mΩ VGS=-2.5V, ID=-2.0A - - 250 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance VDS=-5V, ID=-2.8A - 4.4 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 oC) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=-2.8A - 6 - nC Qgs Gate-Source Charge VDS=-6V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC td(on) Turn-on Delay Time 2 VDS=-6V - 25 - ns tr Rise Time ID=-1A - 60 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-5V - 70 - ns tf Fall Time RD=6Ω -60 - ns Ciss Input Capacitance VGS=0V - 300 - pF Coss Output Capacitance VDS=-6V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -10 A ISM Pulsed Source Current ( Body Diode ) 1 - - -24 A VSD Forward On Voltage 2 Tj=25℃, IS=-10A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ± 12V ±100 |
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