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AP6982M Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP6982M Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
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3 / 7 page  AP6982M CH-2 Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.005 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A - - 25 mΩ VGS=4.5V, ID=4A - - 36 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 9 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=±25V - - ±100 nA Qg Total Gate Charge 2 ID=7A - 11 18 nC Qgs Gate-Source Charge VDS=24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7 - nC td(on) Turn-on Delay Time 2 VDS=15V - 9 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 24 - ns tf Fall Time RD=15Ω -15 - ns Ciss Input Capacitance VGS=0V - 810 1230 pF Coss Output Capacitance VDS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF Rg Gate Resistance f=1.0MHz - 1.26 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time 2 IS=7A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. |
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