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KM68B261A Datasheet(PDF) 4 Page - Samsung semiconductor |
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KM68B261A Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 7 page KM68B261A BiCMOS SRAM Rev 2.0 October-1994 4 WRITE CYCLE Parameter Symbol Write Cycle Time Chip Select to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width(/OE High) Write Pulse Width(/OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z tWC tCW tAS tAW tWP tWP tWR tWHZ tDW tDH tOW Unit ns ns ns ns ns ns ns ns ns ns ns READ CYCLE Parameter Symbol Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH Unit Min Max KM68B261A-6 6 - - - 3 1 0 0 3 - 6 6 4 - - 3 3 - ns ns ns ns ns ns ns ns ns Min Max 7 - - - 3 1 0 0 3 - 7 7 4 - - 3.5 3.5 - Min Max 8 - - - 3 1 0 0 3 - 8 8 4 - - 4 4 - KM68B261A -7 KM68B261A -8 Min Max KM68B261A -6 6 6 0 3.5 3.5 6 1 0 3 0 3 - - - - - - - 3 - - - Min Max 7 7 0 4 4 7 1 0 3.5 0 3 - - - - - - - 3.5 - - - Min Max 8 8 0 4.5 4.5 8 1 0 4 0 3 - - - - - - - 4 - - - KM68B261A -7 KM68B261A -8 |
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