LESHAN RADIO COMPANY, LTD.

LMBTA92_93LT1-1/4

1

3

2

LMBTA92LT1

LMBTA93LT1

SOT–23

High Voltage Transistor

MAXIMUM RATINGS

Rating

Symbol

LMBTA92 LMBTA93

Unit

Collector–Emitter Voltage

–300

–200

Vdc

Collector–Base Voltage

–300

–200

Vdc

Emitter–Base Voltage

–5.0

Vdc

Collector Current — Continuous

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

556

°C/W

Total Device Dissipation

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

417

°C/W

Junction and Storage Temperature

–55 to +150

°C

Value

2

EMITTER

3

COLLECTOR

1

BASE

FEATURE

High voltage.

For Telephony or Professional communication equipment applications.

NPN complement: LMBTA42LT1,LMBTA43LT1.

Pb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LMBTA92LT1

2D

3000/Tape&Reel

LMBTA92LT1G

2D

(Pb-Free)

3000/Tape&Reel

LMBTA93LT1

2E

3000/Tape&Reel

LMBTA93LT1G

2E

(Pb-Free)

3000/Tape&Reel

PNP Silicon

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%.