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FDM2509NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDM2509NZ
Description  Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDM2509NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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February 2006
2006 Fairchild Semiconductor Corporation
FDM2509NZ Rev C2
FDM2509NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
• Li-Ion Battery Pack
Features
• 8.7 A, 20 V
RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 24 mΩ @ VGS = 2.5 V
• ESD protection diode (note 3)
• Low Profile – 0.8mm maximum – in the new package
MicroFET 2x5 mm
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q1
Q2
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current – Continuous
(Note 1a)
8.7
A
– Pulsed
30
PD
Power Dissipation (Steady State)
(Note 1a)
2.2
W
(Note 1b)
0.8
TJ, TSTG
Operating and Storage Junction Temperature
Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
55
°C/W
RθJC
Thermal Resistance, Junction-to-Case (Drain)
2
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2509Z
FDM2509NZ
7’’
12mm
3000 units
PIN 1
G2
S2
S2
G1
S1
S1
S1 S1 G1
S2 S2 G2
MLP 2x5


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