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FDMW2512NZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMW2512NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDMW2512NZ Rev D Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 12 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage, VGS = ±12 V, VDS = 0 V ±10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 0.8 1.5 V ∆V GS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25 C –3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 7.2 A VGS = 4.0 V, ID = 7.2 A VGS = 3.1 V, ID = 6.4 A VGS = 2.5 V, ID = 6.4 A VGS = 4.5 V, ID = 7.2 A, TJ=125°C 19 20 22 23 25 26 28 32 34 39 m Ω gFS Forward Transconductance VDS = 5 V, ID =7.2 A 30 S Dynamic Characteristics Ciss Input Capacitance 740 pF Coss Output Capacitance 165 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 127 pF RG Gate Resistance f = 1.0 MHz 1.4 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 10 20 ns td(off) Turn–Off Delay Time 16 29 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 13 23 ns Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge 1 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 7.2 A, VGS = 4.5 V 3 nC Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.8 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 15 nS Qrr Diode Reverse Recovery Charge IF = 7.2 A, dIF/dt = 100 A/µs 4 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 55°C/W when mounted on a 1in 2 pad of 2 oz copper b) 145°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. |
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