©2006 Fairchild Semiconductor Corporation

1

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FDP15N65 / FDPF15N65 Rev. A

February 2006

FDP15N65 / FDPF15N65

650V N-Channel MOSFET

Features

• Low gate charge ( typical 48.5 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

Absolute Maximum Ratings

Symbol

Parameter

FDP15N65 FDPF15N65

Unit

Drain-Source Voltage

650

V

Drain Current

15

9.5

15*

9.5*

A

A

Drain Current

- Pulsed

(Note 1)

60

60*

A

Gate-Source voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

637

mJ

Avalanche Current

(Note 1)

15

A

Repetitive Avalanche Energy

(Note 1)

25.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

250

2.0

73.5

0.59

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

FDP15N65

FDPF15N65

Unit

Thermal Resistance, Junction-to-Case

0.5

1.7

°C/W

Thermal Resistance, Case-to-Sink

0.5

--

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

* Drain current limited by maximum junction termperature.