IS27HC010

4

Integrated Silicon Solution, Inc.

EP009-1F

07/18/97

Output OR-Tieing

To accommodate multiple memory connections, a two-

line control function is provided to allow for:

1.

Low memory power dissipation, and

2.

Assurance that output bus contention will not

occur.

It is recommended that

CE be decoded and used as the

primary device-selecting function, while

OE be made a

common connection to all devices in the array and con-

nected to the READ line from the system control bus. This

assures that all deselected memory devices are in their

low-power standby mode and that the output pins are only

active when data is desired from a particular memory

device.

System Applications

During the switch between active and standby conditions,

transient current peaks are produced on the rising and

falling edges of Chip Enable. The magnitude of these

transient current peaks is dependent on the output capaci-

tance loading of the device at a minimum, a 0.1

µF ceramic

capacitor (high-frequency, low inherent inductance) should

mize transient effects. In addition, to overcome the voltage

drop caused by the inductive effects of the printed circuit

board traces on EPROM arrays, a 4.7

µF bulk electrolytic

eight devices. The location of the capacitor should be

close to where the power supply is connected to the array.

Mode

CE

CE

CE

CE

CE

OE

OE

OE

OE

OE

PGM

PGM

PGM

PGM

PGM

A0

A9

Outputs

Read

XXX

Output Disable

XXX

Hi-Z

Standby

XXXX

Hi-Z

Program

XX

Program Verify

XX

Program Inhibit

XXXX

Hi-Z

Manufacturer Code

D5H

Device Code

0EH

Notes:

± 0.5V.

5. The IS27HC010 can use the same write algorithm during program as other IS27C010 or IS27010 devices.

LOGIC SYMBOL

17

DQ0-DQ7

A0-A16

CE (E)

PGM (P)

OE (G)

8