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AOP601 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOP601 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 8 page  Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol VDS IDM TJ, TSTG -30 ±20 Gate-Source Voltage A Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain Current B W 7.5 6 30 2.5 1.6 -5.3 -6.6 2.5 1.6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel 30 -30 ±20 Drain-Source Voltage TA=70°C Power Dissipation TA=25°C PD Units V Junction and Storage Temperature Range -55 to 150 -55 to 150 Parameter Maximum Schottky Reverse Voltage 30 A TA=70°C 2.7 Pulsed Forward Current B 20 Continuous Forward Current A TA=25°C ID 4 W TA=70°C 1.6 Junction and Storage Temperature Range -55 to 150 °C Power Dissipation A TA=25°C PD 2.5 AOP601 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 30V -30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (V GS = -10V) < 43m Ω < 58m Ω (V GS = -4.5V) Schottky VDS=30V, IF=3A, VF<0.5V@1A General Description The AOP601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Standard Product AOP601 is Pb-free (meets ROHS & Sony 259 specifications). AOP601L is a Green Product ordering option. AOP601 and AOP601L are electrically identical. D2 G2 S2 G1 D1 S1 K A G1 S1/A G2 S2 D1/K D1/K D2 D2 1 2 3 4 8 7 6 5 N-ch P-ch PDIP-8 Alpha & Omega Semiconductor, Ltd. |
Similar Part No. - AOP601 |
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Similar Description - AOP601 |
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