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AOD407 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOD407 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AOD407 Symbol Min Typ Max Units BVDSS -60 V -0.003 -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -1.5 -2.1 -3 V ID(ON) -30 A 91 115 TJ=125°C 150 114 150 m Ω gFS 12.8 S VSD -0.76 -1 V IS -12 A Ciss 987 1185 pF Coss 114 pF Crss 46 pF Rg 710 Ω Qg(10V) 15.8 20 nC Qg(4.5V) 7.4 9 nC Qgs 3nC Qgd 3.5 nC tD(on) 9ns tr 10 ns tD(off) 25 ns tf 11 ns trr 27.5 35 ns Qrr 30 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VGS=-10V, ID=-12A Reverse Transfer Capacitance IF=-12A, dI/dt=100A/µs Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=-250µA VDS=-48V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage m Ω VGS=-4.5V, ID=-8A IS=-1A,VGS=0V VDS=-5V, ID=-12A Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-30V, RL=2.5Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge (4.5V) Gate Source Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=0V, VDS=-30V, f=1MHz Gate Drain Charge Total Gate Charge (10V) VGS=-10V, VDS=-30V, ID=-12A A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 7 : May 2010 Alpha & Omega Semiconductor, Ltd. 万和兴电子有限公司 www.whxpcb.com |
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