AOD412 datasheet(2/5 Pages) AOSMD

Part #	AOD412

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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2 / 5 page

AOD412

Symbol

Min

Typ

Max

Units

BVDSS

30

V

0.005

1

TJ=55°C

5

IGSS

100

nA

VGS(th)

1.5

2.15

2.5

V

ID(ON)

85

A

5.5

7

TJ=125°C

8.8

11

8.25

10.5

m

Ω

gFS

60

S

VSD

0.72

1

V

IS

85

A

Ciss

1320

1600

pF

Coss

533

pF

Crss

154

pF

Rg

0.95

1.2

Ω

Qg(10V)

26

32

nC

Qg(4.5V)

13.3

16.2

nC

Qgs

3.2

nC

Qgd

6.6

nC

tD(on)

7.2

10

ns

tr

12.5

18

ns

tD(off)

22

33

ns

tf

69

ns

trr

29.7

36

ns

Qrr

29

36

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=4.5V, VDS=15V, ID=20A

Total Gate Charge

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

m

Ω

VGS=4.5V, ID=20A

IS=1A,VGS=0V

VDS=5V, ID=20A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=24V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IF=20A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The Power

dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA curve

provides a single pulse rating.

G. The maximum current rating is limited by the package current capability.

Rev 3 : July 2005

Alpha & Omega Semiconductor, Ltd.

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