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AOL1420L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOL1420L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 5 page AOL1420 Symbol Min Typ Max Units BVDSS 30 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1 1.8 3 V ID(ON) 85 A 2.9 3.7 TJ=125°C 4.4 5.5 4.4 5.5 m Ω gFS 106 S VSD 0.72 1 V IS 85 A Ciss 3200 3840 pF Coss 590 pF Crss 414 pF Rg 0.54 0.7 Ω Qg(10V) 63 76 nC Qg(4.5V) 33 40 nC Qgs 8.6 nC Qgd 17.6 nC tD(on) 12 ns tr 15.5 ns tD(off) 40 ns tf 14 ns trr 34 41 ns Qrr 30 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs Drain-Source Breakdown Voltage On state drain current ID=250μA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=100A/μs Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS μA Gate Threshold Voltage VDS=VGS ID=250μA VDS=24V, VGS=0V VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS m Ω VGS=4.5V, ID=20A IS=1A,VGS=0V VDS=5V, ID=20A Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime Gate Drain Charge VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A Total Gate Charge A: The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev0: August 2005 Alpha & Omega Semiconductor, Ltd. |
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