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TPC8012-H Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TPC8012-H
Description  Switching Regulator Application DC-DC Converters
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8012-H Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPC8012-H
2002-03-04
3
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 200 V, VGS = 0 V
¾
¾
100
mA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
¾
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.9 A
¾
0.28
0.40
W
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.9 A
0.65
1.35
¾
S
Input capacitance
Ciss
¾
440
¾
Reverse transfer capacitance
Crss
¾
80
¾
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
260
¾
pF
Rise time
tr
¾
23
¾
Turn-ON time
ton
¾
28
¾
Fall time
tf
¾
22
¾
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 ms
¾
73
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
11
¾
Gate-source charge 1
Qgs1
¾
6
¾
Gate-drain (“miller”) charge
Qgd
VDD ~- 160 V, VGS = 10 V,
ID = 1.8 A
¾
5
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
¾
¾
¾
7.2
A
Forward voltage (diode)
VDSF
IDR = 1.8 A, VGS = 0 V
¾
¾
-1.5
V
VDD ~- 100 V
0 V
VGS
10 V
ID = 0.9 A
VOUT


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