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DN8899TE Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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DN8899TE Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 3 page VCC ICC IO PD Topr Tstg Supply voltage Supply current Circuit current Power dissipation Operating ambient temperature Storage temperature V mA mA mW ˚C ˚C Parameter Symbol Rating Unit s Absolute Maximum Ratings (Ta=25˚C) 18 8 20 150 –40 to +100 –55 to +125 Parameter Symbol Condition min typ max Unit s Electrical Characteristics (Ta=25˚C) Operating flux density –12 B1 (L→H) mT VCC=12V B2 (H→L) 12 mT 6 VCC=12V Hysteresis width 7 BW mT 10 VCC=12V Low output voltage VOL 0.4 V Supply current mA VCC=16V ICC 5.5 mA VCC=4.5V –6 6 – 0.1 0.1 High output current IOH 10 µA VCC=4.5 to 16V, IO=12mA, B=12mT VCC=4.5 to 16V, VO=16V, B=–12mT 1.5 1.0 1.75 Unit : mm The center of the Hall element is in the hatched area in the right figure. · DN8899 1.0 1.63 · DN8899SE 1.0 1.5 · DN8899TE · DN8899S DN8899 0.7 DN8899SE 0.42 DN8899TE 0.4 DN8899S 0.65 Distance from package surface to sensor (mm) s Hall Element Position Marking surface Applied flux direction Flux density (B) B1 B2 s Flux-Voltage Conversion Characteristics |
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