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TPCS8006 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCS8006 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page TPCS8006 2004-07-06 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 250 V, VGS = 0 V ⎯ ⎯ 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.5 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.5 A ⎯ 0.8 1.0 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.5 A 0.7 1.6 ⎯ S Input capacitance Ciss ⎯ 380 ⎯ pF Reverse transfer capacitance Crss ⎯ 32 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 105 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-ON time ton ⎯ 20 ⎯ Fall time tf ⎯ 15 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 µs ⎯ 45 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 11 ⎯ nC Gate-source charge Qgs ⎯ 7 ⎯ nC Gate-drain (“miller”) charge Qgd VDD ∼− 200V, VGS = 10 V, ID = 1.1 A ⎯ 4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current (pulse) (Note 1) IDRP ⎯ ⎯ ⎯ 4.4 A Forward voltage (diode) VDSF IDR = 1.1 A, VGS = 0 V ⎯ ⎯ −2.0 V Reverse recovery time trr ⎯ 100 ⎯ ns Reverse recovery charge Qrr IDR = 1.1 A, VGS = 0 V, dIDR/dt = 100 A/µs ⎯ 320 ⎯ nC VDD ∼− 100 V 0 V VGS 10 V ID = 0.5 A VOUT |
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