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WCSS0418V1P-133AC Datasheet(PDF) 7 Page - Weida Semiconductor, Inc.

Part # WCSS0418V1P-133AC
Description  256K x 18 Synchronous-Pipelined Cache RAM
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Manufacturer  WEIDA [Weida Semiconductor, Inc.]
Direct Link  http://www.weida.com.my/website/
Logo WEIDA - Weida Semiconductor, Inc.

WCSS0418V1P-133AC Datasheet(HTML) 7 Page - Weida Semiconductor, Inc.

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WCSS0418V1P
Document #: 38-05247
Page 7 of 17
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
..................................... −65°C to +150°C
Ambient Temperature with
Power Applied
.................................................. −55°C to +125°C
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[7]
....................................... −0.5V to V
DD + 0.5V
DC Input Voltage[7]
.................................... −0.5V to V
DD + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Notes:
4.
X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW.
5.
The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW[1:0]. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle.
6.
OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ[15:0];DP[1:0] = High-Z when OE is
inactive or when the device is deselected, and DQ[15:0];DP[1:0] = data when OE is active.
7.
Minimum voltage equals
−2.0V for pulse durations of less than 20 ns.
8.
TA is the case temperature.
Write Cycle Description[4, 5, 6]
Function
GW
BWE
BW3
BW2
BW1
BW0
Read
1
1
XX
XX
Read
10
11
11
Write Byte 0 - DQ[7:0]
10
11
10
Write Byte 1 - DQ[15:8]
10
11
01
Write Bytes 1, 0
1
01
10
0
Write Byte 2 - DQ[23:16]
10
10
11
Write Bytes 2, 0
1
01
01
0
Write Bytes 2, 1
1
01
00
1
Write Bytes 2, 1, 0
1
0
1
0
0
0
Write Byte 3 - DQ[31:24]
10
01
11
Write Bytes 3, 0
1
00
11
0
Write Bytes 3, 1
1
00
10
1
Write Bytes 3, 1, 0
1
0
0
1
0
0
Write Bytes 3, 2
1
00
01
1
Write Bytes 3, 2, 0
1
0
0
0
1
0
Write Bytes 3, 2, 1
1
0
0
0
0
1
Write All Bytes
1
0
0
0
0
0
Write All Bytes
0
X
X
X
X
X
Operating Range
Range
Ambient
Temperature[8]
VDD
VDDQ
Com’l
0°C to +70°C
3.3V
−5%/+10%
2.5V
−5%
3.3V +10%
Industrial
–40°C to +85°C


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