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WCSS0418V1P-133AC Datasheet(PDF) 7 Page - Weida Semiconductor, Inc. |
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WCSS0418V1P-133AC Datasheet(HTML) 7 Page - Weida Semiconductor, Inc. |
7 / 17 page WCSS0418V1P Document #: 38-05247 Page 7 of 17 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ..................................... −65°C to +150°C Ambient Temperature with Power Applied .................................................. −55°C to +125°C Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[7] ....................................... −0.5V to V DD + 0.5V DC Input Voltage[7] .................................... −0.5V to V DD + 0.5V Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA Notes: 4. X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW. 5. The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW[1:0]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is a don't care for the remainder of the write cycle. 6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ[15:0];DP[1:0] = High-Z when OE is inactive or when the device is deselected, and DQ[15:0];DP[1:0] = data when OE is active. 7. Minimum voltage equals −2.0V for pulse durations of less than 20 ns. 8. TA is the case temperature. Write Cycle Description[4, 5, 6] Function GW BWE BW3 BW2 BW1 BW0 Read 1 1 XX XX Read 10 11 11 Write Byte 0 - DQ[7:0] 10 11 10 Write Byte 1 - DQ[15:8] 10 11 01 Write Bytes 1, 0 1 01 10 0 Write Byte 2 - DQ[23:16] 10 10 11 Write Bytes 2, 0 1 01 01 0 Write Bytes 2, 1 1 01 00 1 Write Bytes 2, 1, 0 1 0 1 0 0 0 Write Byte 3 - DQ[31:24] 10 01 11 Write Bytes 3, 0 1 00 11 0 Write Bytes 3, 1 1 00 10 1 Write Bytes 3, 1, 0 1 0 0 1 0 0 Write Bytes 3, 2 1 00 01 1 Write Bytes 3, 2, 0 1 0 0 0 1 0 Write Bytes 3, 2, 1 1 0 0 0 0 1 Write All Bytes 1 0 0 0 0 0 Write All Bytes 0 X X X X X Operating Range Range Ambient Temperature[8] VDD VDDQ Com’l 0°C to +70°C 3.3V −5%/+10% 2.5V −5% 3.3V +10% Industrial –40°C to +85°C |
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