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ALD110814PC Datasheet(PDF) 2 Page - Advanced Linear Devices |
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ALD110814PC Datasheet(HTML) 2 Page - Advanced Linear Devices |
2 / 2 page ALD110814/ALD110914 Advanced Linear Devices 2 Notes: 1 Consists of junction leakage currents OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. Parameter Symbol Min Typ Max Unit Test Conditions ALD110814 / ALD110914 Gate Threshold Voltage VGS(th) 1.38 1.40 1.42 V IDS =1µA VDS = 0.1V Offset Voltage VGS(th)1-VGS(th)2 VOS 310 mV IDS =1µA Offset VoltageTempco TC ∆VOS 5 µV/ °CVDS1 = VDS2 GateThreshold Voltage Tempco TC∆VGS(th) -1.7 mV °CID = 1µA 0.0 ID = 20µA, VDS = 0.1V +1.6 ID = 40µA On Drain Current IDS (ON) 12.0 mA VGS = +10.6V 3.0 VGS = + 5.4V VDS = + 5V Forward Transconductance GFS 1.4 mmho VGS = +5.4V VDS = +10.4V Transconductance Mismatch ∆GFS 1.8 % VGS = + 5.4V Output Conductance GOS 68 µmho VDS = +10.4V Drain Source On Resistance RDS (ON) 500 Ω VDS = 0.1V VGS = +4.0V Drain Source On Resistance ∆RDS (ON) 0.5 % VDS = 0.1V Mismatch VGS = +5.4V Drain Source Breakdown Voltage BVDSX 10 V IDS = 1.0µA VGS = -0.4V Drain Source Leakage Current1 IDS (OFF) 10 100 pA VGS = +0.4V 4nA VDS =10V, TA = 125°C Gate Leakage Current1 IGSS 330 pA VDS = 0V VGS = 10V 1nA TA =125°C Input Capacitance CISS 2.5 pF Transfer Reverse Capacitance CRSS 0.1 pF Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ Crosstalk 60 dB f = 100KHz ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Power dissipation 500 mW Operating temperature range PA, SA, PC, SC package 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C |
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