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ALD114913PA Datasheet(PDF) 2 Page - Advanced Linear Devices |
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ALD114913PA Datasheet(HTML) 2 Page - Advanced Linear Devices |
2 / 2 page ALD114813/ALD114913 Advanced Linear Devices 2 Notes: 1 Consists of junction leakage currents ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Power dissipation 500 mW Operating temperature range PA, SA, PC, SC package 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = -5V TA = 25°C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. Parameter Symbol Min Typ Max Unit Test Conditions ALD114813/ALD114913 Gate Threshold Voltage VGS(th) -1.34 -1.30 -1.26 V IDS =1µA VDS = 0.1V Offset Voltage VOS 720 mV IDS =1µA VGS(th)1-VGS(th)2 Offset Voltage Tempco TCVOS 5 µV/ °CVDS1 = VDS2 GateThreshold Voltage Tempco TCVGS(th) -1.7 mV/ °CID= 1µA 0.0 ID= 20µA, VDS = 0.1V +1.6 ID= 40µA On Drain Current IDS (ON) 12.0 mA VGS = +8.2 V 3.0 VGS = +2.7V VDS = +5V Forward Transconductance GFS 1.4 mmho VGS = +2.7V VDS = +7.7V Transconductance Mismatch ∆GFS 1.8 % Output Conductance GOS 68 µmho VGS =+2.7V VDS = +7.7V Drain Source On Resistance RDS (ON) 500 Ω VDS = 0.1V VGS = +2.7V Drain Source On Resistance RDS (ON) 1.3 KΩ VDS = 0.1V VGS = +0.0V Drain Source On Resistance ∆RDS (ON) 7% Tolerance Drain Source On Resistance ∆RDS (ON) 0.5 % Mismatch Drain Source Breakdown BVDSX 10 V IDS = 1.0µA Voltage VGS = -2.3V Drain Source Leakage Current1 IDS (OFF) 10 100 pA VGS =-2.3V, VDS =+5V 4nA TA = 125°C Gate Leakage Current1 IGSS 330 pA VDS = 0V VGS = +10V 1nA TA =125°C Input Capacitance CISS 2.5 pF Transfer Reverse Capacitance CRSS 0.1 pF Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ Crosstalk 60 dB f = 100KHz |
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