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TA8492P Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TA8492P Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 13 page  TA8492P/PG 2004-07-27 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VS 20 V Supply voltage VCC 20 V Output current IO 1.5 A 1.4 (Note 1) Power dissipation PD 2.7 (Note 2) W Operating temperature Topr −30~85 °C Storage temperature Tstg −55~150 °C Note 1: Not mounted on the PCB Note 2: Mounted on the PCB (PCB area: 50 × 50 × 0.8 mm cu area: 60% or greater) Electrical Characteristics (Ta = 25°C, VCC = VS = 12 V) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICC-1 VCC = 12 V, 3ST: GND, VS: Open ⎯ 5.0 7.0 ICC-2 VCC = 18 V, 3ST: GND, VS: Open ⎯ 6.0 9.0 Supply current ICC-3 1 Stop (3ST = VCC) ⎯ 2.5 4 mA Upper VSAT (U) 2 IO = 1 A (source current) ⎯ 1.35 1.7 Output saturation voltage Lower VSAT (L) 3 IO = 1 A (sink current) ⎯ 0.4 0.6 V Upper IL (U) 4 VS = 20 V ⎯ ⎯ 50 Output leak current Lower IL (L) 5 VS = 20 V ⎯ ⎯ 50 µA Input sensitivity VH 6 ⎯ 20 ⎯ 400 mVp-p Hall amp. Common mode input voltage range VCMRH 7 ⎯ 2 ⎯ VCC − 3.5 V Stop VSTP ⎯ VCC − 0.4 ⎯ VCC CW VFW ⎯ 2.5 ⎯ 6.5 CW/CCW control operation voltage CCW VRV 6 ⎯ 0 ⎯ 0.4 V Thermal shutdown operating temperature TSD ⎯ ⎯ ⎯ 160 ⎯ °C |
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