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IXZ308N120 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXZ308N120 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 3 page IXZ308N120 Z-MOS RF Power MOSFET VDSS = 1200 V ID25 = 8.0 A RDS(on) = 2.1 Ω PDC = 880 W Symbol Test Conditions Maximum Rat- ings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 8 A IDM Tc = 25°C, pulse width limited by TJM 40 A IAR Tc = 25°C 8 A EAR Tc = 25°C TBD mJ dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns IS = 0 >200 V/ns PDC 880 W PDHS Tc = 25°C, Derate 4.4W/°C above 25°C 440 W PDAMB Tc = 25°C 3.0 W RthJC 0.17 C/W RthJHS 0.34 C/W min. typ. max. VDSS VGS = 0 V, ID = 4 ma 1200 V VGS(th) VDS = VGS, ID = 250µΑ 3.5 6.5 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA RDS(on) VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 2.1 Ω gfs VDS = 50 V, ID = 0.5ID25, pulse test 10.1 S TJ -55 +175 °C TJM 175 °C Tstg -55 + 175 °C TL 1.6mm(0.063 in) from case for 10 s 300 °C Weight 3.5 g IDSS VDS = 0.8VDSS TJ = 25C VGS=0 TJ =125C 50 1 µA mA Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low gate charge and capacitances − easier to drive − faster switching • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density N-Channel Enhancement Mode Linear 175MHz RF MOSFET Lo Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications DRAIN SG1 SG2 GATE SD1 SD2 N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications |
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