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1.5SMC16AT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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1.5SMC16AT3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page 1.5SMC6.8AT3 Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 1500 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75 °C Thermal Resistance from Junction−to−Lead PD RqJL 4.0 54.6 18.3 W mW/ °C °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25 °C Thermal Resistance from Junction−to−Ambient PD RqJA 0.75 6.1 165 W mW/ °C °C/W Forward Surge Current (Note 4) @ TA = 25°C IFSM 200 A Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 10 X 1000 ms, non−repetitive 2. 1 ″ square copper pad, FR−4 board 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 100 A) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF 5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty cycle Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF |
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