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AS4C1M16E5-45JC Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation

Part # AS4C1M16E5-45JC
Description  5V 1M횞16 CMOS DRAM (EDO)
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C1M16E5-45JC Datasheet(HTML) 3 Page - Alliance Semiconductor Corporation

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AS4C1M16E5
4/11/01; v.1.0
Alliance Semiconductor
P. 3 of 22
Absolute maximum ratings
Truth table
Parameter
Symbol
Min
Max
Unit
Input voltage
Vin
-1.0
+7.0
V
Input voltage (DQs)
VDQ
-1.0
VCC + 0.5
V
Power supply voltage
VCC
-1.0
+7.0
V
Storage temperature (plastic)
TSTG
-65
+150
°C
Soldering temperature × time
TSOLDER
260 × 10
oC × sec
Power dissipation
PD
–1
W
Short circuit output current
Iout
–50
mA
Operation
RAS
LCAS
UCAS
WE
OE
Addresses
DQ0 to DQ15
Notes
tR
tC
Standby
H
H to X
H to X
X
X
X
X
High-Z
Word read
LL
L
H
L
ROW
COL
Data out
Lower byte
read
LL
H
H
L
ROW
COL
Lower byte,
Upper byte, Data out
Upper byte
read
LH
L
H
L
ROW
COL
Lower byte,
Data out, Upper byte
Word
(early) write
LL
L
L
X
ROW
COL
Data in
Lower byte
(early) write
LL
H
L
X
ROW
COL
Lower byte, Data in,
Upper byte, High-Z
Upper byte
(early) write
LH
L
L
X
ROW
COL
Lower byte, High-Z,
Upper byte, Data in
Read write
L
L
L
H to L
L to H
ROW
COL
Data out, Data in
1,2
EDO read
1st cycle
L
H to L
H to L
H
L
ROW
COL
Data out
2
2nd cycle
L
H to L
H to L
H
L
n/a
COL
Data out
2
Any cycle
L
L to H
L to H
H
L
n/a
n/a
Data out
2
EDO write
1st cycle
L
H to L
H to L
L
X
ROW
COL
Data in
1
2nd cycle
L
H to L
H to L
L
X
n/a
COL
Data in
1
EDO
read write
1st cycle
L
H to L
H to L
H to L
L to H
ROW
COL
Data out, Data in
1,2
2nd cycle
L
H to L
H to L
H to L
L to H
n/a
COL
Data out, Data in
1,2
RAS only
refresh
L
H
H
X
X
ROW
n/a
High Z
CBR refresh
H to L
L
L
H
X
X
X
High Z
3


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