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DP8520AV-25 Datasheet(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # DP8520AV-25
Description  DP8520A/DP8521A/DP8522A microCMOS Programmable 256k/1M/4M Video RAM Controller/Drivers
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DP8520AV-25 Datasheet(HTML) 7 Page - National Semiconductor (TI)

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20 Signal Descriptions
Pin
Device (If not
Input
Description
Name
applicable to all)
Output
21 ADDRESS RW AND PROGRAMMING SIGNALS
R0 – 10
DP8522A
I
ROW ADDRESS
These inputs are used to specify the row address during an
access or refresh to the VRAM or for a VRAM transfer cycle They are also used
R0 – 9
DP8520A21A
I
to program the chip when ML is asserted (except R10)
C0 – 10
DP8522A
I
COLUMN ADDRESS
These inputs are used to specify the column address
during an access to the VRAM or for a VRAM transfer cycle They are also used
C0 – 9
DP8520A21A
I
to program the chip when ML is asserted (except C10)
B0 B1
I
BANK SELECT
Depending on programming these inputs are used to select a
group of RAS and CAS outputs to assert during an access They are also used to
program the chip when ML is asserted
ECAS0–1
I
ENABLE CAS
These inputs are used to enable a single or group of CAS outputs
when asserted In combination with the B0 B1 and the programming bits these
inputs select which CAS output or CAS outputs will assert during an access
ECAS0 must be asserted for either CAS0orCAS1 to assert during an access
ECAS1 must be asserted for either CAS2orCAS3 to assert during an access
The ECAS signals can also be used to toggle a group of CAS outputs for
pagenibble mode accesses They also can be used for byte write operations If
ECAS0 is negated during programming continuing to assert the ECAS0 while
negating AREQ or AREQB during an access will cause the CAS outputs to be
extended while the RAS outputs are negated (the ECASn inputs have no effect
during scrubbing refreshes)
WIN
I
WRITE ENABLE IN
This input is used to signify a write operation to the VRAM
This input asserted will also cause CAS to delay to the next positive clock edge if
address bit C9 is asserted during programming
COLINC
I
COLUMN INCREMENT
When the address latches are used and a refresh is not
in progress this input functions as COLINC Asserting this signal causes the
(EXTNDRF)
I
column address to be incremented by one When a refresh is in progress this
signal when asserted is used to extend the refresh cycle by any number of
periods of CLK until it is negated
ML
I
MODE LOAD
This input signal when low enables the internal programming
register that stores the programming information
22 VRAM CONTROL SIGNALS
Q0 – 10
DP8522A
O
VRAM ADDRESS
These outputs are the multiplexed output of the R0 – 9 10
and C0 – 9 10 and form the VRAM address bus These outputs contain the
Q0 – 9
DP8521A
O
refresh address whenever a refresh is in progress They contain high capacitive
Q0 – 8
DP8521A
O
drivers with 20X series damping resistors
RAS0–3
O
ROW ADDRESS STROBES
These outputs are asserted to latch the row
address contained on the outputs Q0 – 8 9 10 into the VRAM When a refresh is
in progress the RAS outputs are used to latch the refresh row address contained
on the Q0 – 8 9 10 outputs in the VRAM These outputs contain high capacitive
drivers with 20X series damping resistors
CAS0–3
O
COLUMN ADDRESS STROBES
These outputs are asserted to latch the
column address contained on the outputs Q0 – 8 9 10 into the VRAM These
outputs have high capacitive drivers with 20X series damping resistors
DT OE
O
DATA TRANSFEROUTPUT ENABLE
This output transitions low before RAS
goes low and transitions high before RAS goes high during a video RAM shift
register load operation (see VSRL pin description) During normal write accesses
this output is held high and for read accesses this output is asserted after CAS is
asserted and is negated after CAS negates
7


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