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2SC2715M Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SC2715M Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 3 page  C TOP B E C C BACK E B JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors 2SC2715M TRANSISTOR DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: RR,RO,RY C RR B E AXIMUM RATINGS* TA=25 ℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 4 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain hFE VCE=12V, IC=2mA 40 240 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1 V Transition frequency fT VCE=10V, IC=1mA 100 400 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHZ 3.2 pF Collector- Base time constant Cc.rbb’ VCE=10V, IC=1mA, f=30MHZ 50 ps Power Gain Gp VCE=6V, IC=1mA, f=10.7MHZ 27 33 dB WBFBP-03B (1.2×1.2×0.5) unit: mm 1. BASE 2. EMITTER 3. COLLECTOR |
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