Features

applications

light protection

Description

The OP705 series devices consist of

NPN silicon phototransistors molded in

blue tinted epoxy packages. The narrow

receiving angle provides excellent on-

axis coupling. These devices are 100%

production tested using infrared light for

close correlation with Optek

’s GaAs and

GaAlAs emitters.

The phototransistor has an internal base-

emitter resistor which provides protection

from low level ambient lighting

conditions. This feature is also useful

when the media being detected is semi-

transparent to infrared light in interruptive

applications.

Collector-Emitter Voltage. . . .......... . . . . . ... . . ......... . .. . . . ... . . . 30 V

Emitter Reverse Current... . . . .. . ... . . .... . . ... . . . .. . ... . . .... . . ... 10 mA

Collector DC Current ..... . . . .. . ... . . .... . . ... . . . .. . ... . . .... . . ... 30 mA

Storage and Operating Temperature Range. . ... . . ......... . . -40

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering

iron] . . . .... . . ... . .. . . . ... . . .... . . ... . .. . . . ... . . .... . . ... . .. . 260

Power Dissipation ..... . . . .. . ... . . ......... . . . .. . ... . . .... . . .. 100 mW

(2)

Ò±¬»-æ

(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.

Max. 20 grams force may be applied to leads when soldering.

(2) Derate linearly 1.33 mW/

(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a

radiometric intensity level which varies less than 10% over the entire lens surface of the

phototransistor being tested.

Typical Performance Curves

Product Bulletin OP705

March 1999

NPN Phototransis

tor with Base-Emitter Resistor

Types OP705A, OP705B, OP705C, OP705D

Optek Technology, Inc.

1215 W. Crosby Road

Carrollton, Texas 75006

(972) 323-2200

Fax (972) 323-2396

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5

Schematic