DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD6001DO

type contains Two (2) Isolated Opposing Configuration,

Silicon Switching Diodes, manufactured by the epitaxial

mount package. These devices are designed for

switching applications requiring extremely low leakage.

MARKING CODE: C60

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

75

V

Peak Repetitive Reverse Voltage

VRRM

100

V

Continuous Forward Current

IF

250

mA

Forward Surge Current, tp=1 µsec.

IFSM

4000

mA

Forward Surge Current, tp=1 sec.

IFSM

1000

mA

Power Dissipation

PD

250

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=75V

500

pA

BVR

IR=100µA

100

V

VF

IF=1.0mA

0.85

V

VF

IF=10mA

0.95

V

VF

IF=100mA

1.1

V

CT

VR=0, f=1 MHz

2.0

pF

trr

IR=IF=10mA, RL=100Ω Rec. to 1.0mA

3.0

µs

CMLD6001DO

SURFACE MOUNT

DUAL, ISOLATED, OPPOSING

LOW LEAKAGE SILICON

SWITCHING DIODES

Central

Semiconductor Corp.

TM

R0 (3-November 2003)

SOT-563 CASE