TC58NVG1S3BFT00 datasheet(4/37 Pages) TOSHIBA

Part #	TC58NVG1S3BFT00

Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Download	37 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

4 / 37 page

TC58NVG1S3BFT00/TC58NVG1S8BFT00

2003-10-30A

4

VALID BLOCKS

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

NVB

Number of Valid Blocks

2008



2048

Blocks

NOTE:

The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.

The first block (Block 0) is guaranteed to be a valid block at the time of shipment.

The minimum number of valid blocks is guaranteed over the lifetime.

RECOMMENDED DC OPERATING CONDITIONS

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

VCC

Power Supply Voltage

2.7 V



3.6 V

V

VIH

High Level input Voltage

2.7 V

≤ VCC ≤ 3.6 V

2.0



VCC + 0.3

V

VIL

Low Level Input Voltage

2.7 V

≤ VCC ≤ 3.6 V

−0.3*



0.8

V

*

−2 V (pulse width lower than 20 ns)

DC CHARACTERISTICS (Ta = 0 to 70℃, VCC = 2.7 V to 3.6 V)

SYMBOL

PARAMETER

CONDITION

MIN

TYP.

MAX

UNIT

IIL

Input Leakage Current

VIN = 0 V to VCC



±10

µA

ILO

Output Leakage Current

VOUT = 0 V to VCC



±10

µA

PSL

= GND or NC



10

30

ICCO0*

Power On Reset Current

PSL

= VCC, FFh command input after

Power On



10

30

mA

ICCO1

Serial Read Current

CE

= VIL, IOUT = 0 mA, tcycle = 50 ns



10

30

mA

ICCO2

Programming Current



10

30

mA

ICCO3

Erasing Current



10

30

mA

ICCS1

Standby Current

CE

= VIH, WP = 0 V/VCC



1

mA

ICCS2

Standby Current

CE

= VCC − 0.2 V, WP = 0 V/VCC



10

50

µA

VOH

High Level Output Voltage

IOH = −0.4 mA (2.7 V ≤ VCC ≤ 3.6 V)

2.4



V

VOL

Low Level Output Voltage

IOL = 2.1 mA (2.7 V ≤ VCC ≤ 3.6 V)



0.4

V

IOL

(

BY

/

RY

)

Output current of

BY

/

RY

VOL = 0.4 V (2.7 V ≤ VCC ≤ 3.6 V)



8



mA

*

Refer to application note (2) for detail

Similar Part No. - TC58NVG1S3BFT00

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	TC58NVG1S3EBAI4	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)
	TC58NVG1S3ETA00	497Kb / 65P	2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
	TC58NVG1S3ETA00	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)
	TC58NVG1S3ETAI0	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)
KIOXIA Corporation	TC58NVG1S3HBAI4	538Kb / 66P	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

More results

Similar Description - TC58NVG1S3BFT00

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	TC58DVG02A1FT00	453Kb / 44P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55NEM208A	107Kb / 10P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58512FT	420Kb / 43P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TH58100FT	421Kb / 43P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC51WHM616AXBN70	207Kb / 11P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VEM316AXBN40	209Kb / 14P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VBM316AFTN	216Kb / 15P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VCM216ASTN40	201Kb / 14P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58FVM5T2AFT65	799Kb / 63P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VD1618FF-133	888Kb / 20P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

More results

TC58NVG1S3BFT00 Datasheet(PDF) 4 Page - Toshiba Semiconductor

TC58NVG1S3BFT00 Datasheet(HTML) 4 Page - Toshiba Semiconductor

Similar Part No. - TC58NVG1S3BFT00

Similar Description - TC58NVG1S3BFT00

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

Datasheet Download

Link URL