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IRHY9230CM Datasheet(PDF) 1 Page - International Rectifier |
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IRHY9230CM Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current -6.5 ID @ VGS = 12V, TC = 100°C Continuous Drain Current -4.1 IDM Pulsed Drain Current ➀ -26 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 165 mJ IAR Avalanche Current ➀ -6.5 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt -27 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10s) Weight 4.3 (Typical) g Pre-Irradiation International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This tech- nology has over a decade of proven performance and reliability in satellite applications. These de- vices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These de- vices retain all of the well established advantages of MOSFETs such as voltage control, fast switch- ing, ease of paralleling and temperature stability of electrical parameters. oC A 12/05/00 www.irf.com 1 For footnotes refer to the last page Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) RAD-Hard ™ HEXFET ® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY9230CM 100K Rads (Si) 0.8 Ω -6.5A JANSR2N7383 IRHY93230CM 300K Rads (Si) 0.8 Ω -6.5A JANSF2N7383 TO-257AA IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615 PD-91401 |
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