RDX045N60

Transistors

1/2

10V Drive Nch MOS FET

RDX045N60

Structure

External dimensions (Unit : mm)

Silicon N-channel MOS FET

TO-220FM

(1)Gate

Features

1) Low on-resistance.

2) Low input capacitance.

3) Excellent resistance to damage from static electricity.

Applications

(2)Dr

(3)Source

ain

4.5

2.8

0.75

φ3.2

)(3)

0.8

2.54

2.6

2.54

1.3

1.2

10.0

(2

(1)

Switching

Packaging specifications

Inner circuit

(1) Gate

(2) Drain

(3) Source

∗1 GATE PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(1)

(3)

(2)

Package

Code

Bulk

Basic ordering unit (pieces)

RDX045N60

−

500

Type

Absolute maximum ratings (Ta=25

°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation (Tc=25

°C)

Channel temperature

Avalanche current

Avalanche energy

Range of storage temperature

Continuous

Pulsed

Continuous

Pulsed

Source current

(Body diode)

∗2

∗1

∗2

∗3

∗4

V

Symbol

600

V

±30

A

±4.5

A

±18

A

4.5

A

18

W

35

°C

Tch

150

°C

Tstg

−55 to +150

Limits

Unit

A

4.5

mJ

40

∗1 Limited only by maximum temperature allowed

∗2 Pw 10µs, Duty cycle 1%

Thermal resistance

Parameter

°C/W

Rth(ch-c)

Symbol

Limits

Unit

Channel to case

3.57