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TPCA8006-H Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPCA8006-H Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page TPCA8006-H 2004-03-08 1 TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVII) TPCA8006-H Switching Regulator Applications Motor Drive Applications • Small footprint due to small and thin package • High speed switching • Low drain-source ON resistance : RDS (ON) = 41 mO (typ.) (VG=10V, ID=9A) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) • Enhancement mode: Vth = 3.0 to 5.0 V (V DS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 18 Drain current Pulsed (Note 1) IDP 36 A Drain power dissipation (Tc=25℃) PD 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 224 mJ Avalanche current IAR 18 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 5.0±0.2 S 0.05 S A 1.27 0.4±0.1 0.595 0.05 M A 1 4 5 8 0.15±0.05 0.8±0.1 4.25±0.2 1 4 5 8 JEDEC ? JEITA ? TOSHIBA 2-5Q1A Weight: 0.080 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN |
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