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TC6320 Datasheet(PDF) 1 Page - Supertex, Inc |
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TC6320 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 3 page TC6320 ________________________________________________________________________________ Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Initial Release N- and P-Channel Enhancement-Mode MOSFET Pair Features Integrated gate-source resistor Integrated gate-source zener diode Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage Application High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Logic level interfaces Absolute Maximum Ratings* Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C *Distance of 1.6mm from case for 10 seconds. General Description The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET in an SO-8 package. Both MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. TC6320TG, a complementary high-speed, high voltage, gate-clamped N- and P-channel MOSFET pair in a single SO-8 package. The TC6320TG offers 200V breakdown voltage, 2.0A output peak current and low input capacitance. The 2.0A output current capability will minimize rise and fall times. The low input capacitance will minimize propagation delay times and also rise and fall times. The MOSFETs have integrated gate-source resistors and gate-source zener diode clamps that are desired for high voltage pulser applications saving board space and improving performance. It is specifically designed for applications in medical ultrasound transmitters and non- destructive evaluation in materials flaw detection, but it can also be used as an efficient buffer. Package Option S1 G1 S2 G2 D2 D2 D1 D1 SO-8 Package (top view) N-Channel P-Channel 1 2 3 45 6 7 8 |
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